报 告 人：刘兴强 博士（武汉大学）

报告时间：2014年11月18日（星期二） 下午4:00-4:40

报告地点：bat365在线平台官方网站六层学术报告厅（致知楼3623-3624）

报告摘要：Thin film transistors (TFTs) have broad applications for flexible electronics and information display. To implement flexible high-performance electronics, materials with a high carrier mobility and high flexibility are required. Firstly, through using a hybrid material structure consisting of single-walled carbon nanotube (SWNTs) embedded directly into the a-InZnO thin film via spin-coating process, which significantly improves electrical properties and mechanical behaviors of the thin films. Furthermore, by modulating the contents of the oxide matrix, TFTs with high mobility and tunable threshold voltage (V_th) were fabricated for low-power logic applications. Secondly, To avoid short channel effect and the electrostatic screening effect, a combined sol-gel and contact-printing method was employed to incorporate high-mobility aligned-SnO₂ nanowires (NWs) into a-InGaZnO thin films for fabricating high-mobility TFTs so that the advantages of a-InGaZnO film (large-scale fabrication) and NWs (high mobility) could be combined. The composite system was also demonstrated to be high-performance ultraviolet photodetector. Finally, transparent phototransistors array was fabricated on glass with high reproducibility and scalability, and this type of metal oxide/photosensitive NW TFT offers a unique route toward miniaturization of photodetectors while maintaining their functionality, and presents a potential paradigm shift in large-scale transparent image sensors.

报告人简介：

刘兴强博士自2010年至今在武汉大学物理科学与技术学院攻读博士学位，作为第一作者在Nano Letters、Advanced Materials、Applied Physics Letters、Nanoscale等期刊上发表SCI论文7篇，在ACS Nano、Nano Letters、Small、Nanotechnology和IEEE Electron Device Letters等期刊上合作发表SCI论文6篇。

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2014年11月14日